Paper
5 August 2009 Structure design and simulation of uncooled infrared sensors
Yuanqing Wu, Suying Yao, Peng Gao, Hongwei He
Author Affiliations +
Abstract
This paper deals with a complete analytical modeling and analysis of thermoelectric uncooled infrared sensors compatible with CMOS technology. The model put forward is based on dividing the sensor into three zones, each one being the subject of a thorough thermal study (conduction, convection and radiation thermal effect). Through the analytical thermal gradient analysis developed in each zone of the structure (absorber, part of thermoelectric transducer layer placed under the absorber, thermoelectric transducer) we are able to predict the sensitivity, detectivity and the stability power to the sensor. Thus, such a kind of analytical approach is worth of interest to optimize thermopile sensor design parameters.
© (2009) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuanqing Wu, Suying Yao, Peng Gao, and Hongwei He "Structure design and simulation of uncooled infrared sensors", Proc. SPIE 7383, International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Infrared Imaging and Applications, 73832I (5 August 2009); https://doi.org/10.1117/12.834972
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KEYWORDS
Sensors

Infrared sensors

Resistance

Thermal modeling

Thermoelectric materials

Temperature metrology

Infrared imaging

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