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3 September 2009 Group IV semiconductor nanowire arrays: different flavors of epitaxy
Paul C. McIntyre, Hemant Adhikari, Irene A. Goldthorpe, Ann F. Marshall, Christopher E. D. Chidsey
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Proceedings Volume 7406, Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials; 74060I (2009) https://doi.org/10.1117/12.827425
Event: SPIE NanoScience + Engineering, 2009, San Diego, California, United States
Abstract
Epitaxy can be used to direct nanowire chemical vapor deposition and to influence the crystallographic orientation of nanowires during their nucleation and growth via the vapor-liquid-solid mechanism. Under some circumstances, the influence of epitaxy competes with capillary effects and the influence of nanoparticle catalyst coarsening and surface impurities on nanowire orientation selection. We have investigated rapid thermal chemical vapor deposition of epitaxial Ge nanowires and have used it to separately study nanowire nucleation and growth. This has given important insights into deep-subeutectic Ge nanowire growth using Au catalyst particles. These Ge nanowires have also been studied as the cores in epitaxial Ge core/Si shell nanowires. We have studied the conditions under which strain driven surface roughening and dislocations formation occurs in these coaxial nanowire heterostructures. Recent results indicate that suppression of Si shell surface roughening can lead to fully strained, coherent core/shell nanowires.
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Paul C. McIntyre, Hemant Adhikari, Irene A. Goldthorpe, Ann F. Marshall, and Christopher E. D. Chidsey "Group IV semiconductor nanowire arrays: different flavors of epitaxy", Proc. SPIE 7406, Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials, 74060I (3 September 2009); https://doi.org/10.1117/12.827425
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KEYWORDS
Nanowires
Germanium
Silicon
Gold
Chemical vapor deposition
Crystals
Epitaxy
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