Laser generation in broken-gap heterostructures

I. Semenikhin; K. A. Chao; A. Zakharova

doi:10.1117/12.853906

26 February 2010 Laser generation in broken-gap heterostructures

I. Semenikhin, K. A. Chao, A. Zakharova

Proceedings Volume 7521, International Conference on Micro- and Nano-Electronics 2009; 75210E (2010) https://doi.org/10.1117/12.853906
Event: International Conference on Micro- and Nano-Electronics 2009, 2009, Zvenigorod, Russian Federation

Abstract

We investigate the effects of population inversion and laser generation in interesting and important quantum well laser structures made from InAs, AlSb, and GaSb. These broken-gap heterostructures, where the InAs conduction band overlaps with the GaSb valence band, are promising for fabrication different devices. We have considered the asymmetrical InAs/GaSb quantum wells sandwiched by the two AlSb wide-gap barrier layers, n-type InAs left contact and p-type GaSb right contact. We found that the population inversion and laser generation can be achieved in the structure under positive external bias. We have obtained the giant values of optical gain for the TM laser modes.

Citation Download Citation

I. Semenikhin, K. A. Chao, and A. Zakharova "Laser generation in broken-gap heterostructures", Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 75210E (26 February 2010); https://doi.org/10.1117/12.853906

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