Calculation of electrophysical parameters of thin undoped GaAs-in-Al2O3 quantum nanowires and single-wall armchair carbon nanotubes

Dmitry Pozdnyakov; Andrei Borzdov; Vladimir Borzdov; Vladimir Labunov

doi:10.1117/12.853655

26 February 2010 Calculation of electrophysical parameters of thin undoped GaAs-in-Al₂O₃ quantum nanowires and single-wall armchair carbon nanotubes

Dmitry Pozdnyakov, Andrei Borzdov, Vladimir Borzdov, Vladimir Labunov

Author Affiliations +

Proceedings Volume 7521, International Conference on Micro- and Nano-Electronics 2009; 75210S (2010) https://doi.org/10.1117/12.853655
Event: International Conference on Micro- and Nano-Electronics 2009, 2009, Zvenigorod, Russian Federation

Abstract

In this study the results of electron mobility and drift velocity calculation in GaAs-in-Al₂O₃ quantum nanowires, resistance and conductivity of single-wall armchair carbon nanotubes as well as electric current in the nanotubes are presented.

Citation Download Citation

Dmitry Pozdnyakov, Andrei Borzdov, Vladimir Borzdov, and Vladimir Labunov "Calculation of electrophysical parameters of thin undoped GaAs-in-Al₂O₃ quantum nanowires and single-wall armchair carbon nanotubes", Proc. SPIE 7521, International Conference on Micro- and Nano-Electronics 2009, 75210S (26 February 2010); https://doi.org/10.1117/12.853655

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