Role of electron blocking layer in III-nitride laser diodes and light-emitting diodes

Yen-Kuang Kuo; Jih-Yuan Chang; Mei-Ling Chen

doi:10.1117/12.841266

25 February 2010 Role of electron blocking layer in III-nitride laser diodes and light-emitting diodes

Yen-Kuang Kuo, Jih-Yuan Chang, Mei-Ling Chen

Proceedings Volume 7597, Physics and Simulation of Optoelectronic Devices XVIII; 759720 (2010) https://doi.org/10.1117/12.841266
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

A high energy bandgap electron blocking layer (EBL) just behind the active region is conventionally used in the nitride-based laser diodes (LDs) and light-emitting diodes (LEDs) to improve the confinement capability of electrons within the quantum wells. Nevertheless, the EBL may also act as a potential barrier for the holes and cause non-uniform distribution of holes among quantum wells. A most recent study by Han et al. (Appl. Phys. Lett. 94, 231123, 2009) reported that, because of the blocking effect for holes, the InGaN LED device without an EBL has slighter efficiency droop and higher light output at high level of current injection when compared with the LED device with an EBL. This result seems to contradict with the original intention of using the EBL. Furthermore, findings from our previous studies (IEEE J. Lightwave Technol. 26, 329, 2008; J. Appl. Phys. 103, 103115, 2008; Appl. Phys. Lett. 91, 201118, 2007) indicated that the utilization of EBL is essential for the InGaN laser diodes. Thus, in this work, the optical properties of the InGaN LDs and LEDs are explored numerically with the LASTIP simulation program and APSYS simulation program, respectively. The analyses focus particularly on the light output power, energy band diagrams, recombination rates, distribution of electrons and holes in the active region, and electron overflow. This study will then conclude with a discussion of the effect of EBL on the optical properties of the InGaN LDs and LEDs.

Citation Download Citation

Yen-Kuang Kuo, Jih-Yuan Chang, and Mei-Ling Chen "Role of electron blocking layer in III-nitride laser diodes and light-emitting diodes", Proc. SPIE 7597, Physics and Simulation of Optoelectronic Devices XVIII, 759720 (25 February 2010); https://doi.org/10.1117/12.841266

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