Electronic dynamics due to exchange interaction with holes in GaAs

Hans Christian Schneider; Michael Krauß

doi:10.1117/12.842193

1 March 2010 Electronic dynamics due to exchange interaction with holes in GaAs

Hans Christian Schneider, Michael Krauß

Proceedings Volume 7600, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV; 76001D (2010) https://doi.org/10.1117/12.842193
Event: SPIE OPTO, 2010, San Francisco, California, United States

Abstract

We present an investigation of electron-spin dynamics in p-doped bulk GaAs due to the electron-hole exchange interaction, aka the Bir-Aronov-Pikus mechanism. We discuss under which conditions a spin relaxation times for this mechanism is, in principle, accessible to experimental techniques, in particular to 2-photon photoemission, but also Faraday/Kerr effect measurements. We give numerical results for the spin relaxation time for a range of p-doping densities and temperatures. We then go beyond the relaxation time approximation and calculate numerically the spin-dependent electron dynamics by including the spin-flip electron-hole exchange scattering and spin-conserving carrier Coulomb scattering at the level of Boltzmann scattering integrals. We show that the electronic dynamics deviates from the simple spin-relaxation dynamics for electrons excited at high energies where the thermalization does not take place faster than the spin relaxation time. We also present a derivation of the influence of screening on the electron-hole exchange scattering and conclude that it can be neglected for the case of GaAs, but may become important for narrow-gap semiconductors.

Citation Download Citation

Hans Christian Schneider and Michael Krauß "Electronic dynamics due to exchange interaction with holes in GaAs", Proc. SPIE 7600, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XIV, 76001D (1 March 2010); https://doi.org/10.1117/12.842193

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