Stochastic simulation of photon scattering for EUV mask defect inspection

Ting-Hang Pei; Kuen-Yu Tsai; Jia-Han Li

doi:10.1117/12.846695

22 March 2010 Stochastic simulation of photon scattering for EUV mask defect inspection

Ting-Hang Pei, Kuen-Yu Tsai, Jia-Han Li

Proceedings Volume 7636, Extreme Ultraviolet (EUV) Lithography; 763624 (2010) https://doi.org/10.1117/12.846695
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

When EUV light is used to inspect mask defects, the reflective photons reveal information for both the mask structure and the mask defects. The number of reflective photons has to be enough for generating sufficient detector signals. A modeling technique based on Feynman path integral is utilized to calculate the number of reflective extreme-ultraviolet (EUV) photons scattered from photomask surfaces. For a 2D semicircular silicon defect, the capability of predicting the moving direction for each reemitting photon and the intensity of photons in different direction has been demonstrated.

Citation Download Citation

Ting-Hang Pei, Kuen-Yu Tsai, and Jia-Han Li "Stochastic simulation of photon scattering for EUV mask defect inspection", Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 763624 (22 March 2010); https://doi.org/10.1117/12.846695

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available