High-accuracy OPC-modeling by using advanced CD-SEM based contours in the next-generation lithography

Daisuke Hibino; Hiroyuki Shindo; Yuichi Abe; Yutaka Hojyo; Germain Fenger; Thuy Do; Ir Kusnadi; John L. Sturtevant; Peter De Bisschop; Jeroen Van de Kerkhove

doi:10.1117/12.846025

1 April 2010 High-accuracy OPC-modeling by using advanced CD-SEM based contours in the next-generation lithography

Daisuke Hibino, Hiroyuki Shindo, Yuichi Abe, Yutaka Hojyo, Germain Fenger, Thuy Do, Ir Kusnadi, John L. Sturtevant, Peter De Bisschop, Jeroen Van de Kerkhove

Author Affiliations +

Proceedings Volume 7638, Metrology, Inspection, and Process Control for Microlithography XXIV; 76381X (2010) https://doi.org/10.1117/12.846025
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

OPC-modeling is traditionally based on CD-measurements. As design rules shrink, and process window become smaller, there is an unavoidable increase in the complexity of OPC/RET schemes required to enable design printability. The number of measurement points for OPC-modeling has increased to several hundred points per layer, and metrology requirements are no longer limited to simple one-dimensional measurements. Contour-based OPC-modeling has recently arisen as an alternative to the conventional CD-based method. In this paper, the technology of contour alignment and averaging was extended to arbitrary 2D structures. Furthermore the quality of SEM-contours was significantly improved in cases where the image has both horizontal and vertical edges (as is the case for most 2D structures), by a new SEM image method, which we call 'Fine SEM Edge'. OPC model calibration was done using SEM-contours from 2D structures. Then, the effectiveness of Contour-based calibration was examined by doing OPC model verification. The experimental results of the model quality with innovative SEM-contours with Fine SEM Edge (FSE) and Advanced alignment and averaging that was developed by Hitachi High-Technologies are reported. This combination of advanced alignment and averaging and FSE technologies makes the best use of the advantage of the contour-based OPC-modeling, and should be of use for the next generation lithography.

Citation Download Citation

Daisuke Hibino, Hiroyuki Shindo, Yuichi Abe, Yutaka Hojyo, Germain Fenger, Thuy Do, Ir Kusnadi, John L. Sturtevant, Peter De Bisschop, and Jeroen Van de Kerkhove "High-accuracy OPC-modeling by using advanced CD-SEM based contours in the next-generation lithography", Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 76381X (1 April 2010); https://doi.org/10.1117/12.846025

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available