LENS (lithography enhancement toward nano scale): a European project to support double exposure and double patterning technology development

Pietro Cantu; Livio Baldi; Paolo Piacentini; Joost Sytsma; Bertrand Le Gratiet; Stéphanie Gaugiran; Patrick Wong; Hiroyuki Miyashita; Luisa Rita Atzei; Xavier Buch; Dick Verkleij; Olivier Toublan; Francesco Perez-Murano; David Mecerreyes

doi:10.1117/12.846030

3 March 2010 LENS (lithography enhancement toward nano scale): a European project to support double exposure and double patterning technology development

Pietro Cantu, Livio Baldi, Paolo Piacentini, Joost Sytsma, Bertrand Le Gratiet, Stéphanie Gaugiran, Patrick Wong, Hiroyuki Miyashita, Luisa Rita Atzei, Xavier Buch, Dick Verkleij, Olivier Toublan, Francesco Perez-Murano, David Mecerreyes

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Proceedings Volume 7640, Optical Microlithography XXIII; 764022 (2010) https://doi.org/10.1117/12.846030
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

In 2009 a new European initiative on Double Patterning and Double Exposure lithography process development was started in the framework of the ENIAC Joint Undertaking. The project, named LENS (Lithography Enhancement Towards Nano Scale), involves twelve companies from five different European Countries (Italy, Netherlands, France, Belgium Spain) and includes: IC makers (Numonyx and STMicroelectronics), a group of equipment and materials companies (ASML, Lam Research srl, JSR, FEI), a mask maker (Dai Nippon Photomask Europe), an EDA company (Mentor Graphics) and four research and development institutes (CEA-Leti, IMEC, Centro Nacional de Microelectrónica, CIDETEC). The LENS project aims to develop and integrate the overall infrastructure required to reach patterning resolutions required by 32nm and 22nm technology nodes through the double patterning and pitch doubling technologies on existing conventional immersion exposure tools, with the purpose to allow the timely development of 32nm and 22nm technology nodes for memories and logic devices, providing a safe alternative to EUV, Higher Refraction Index Fluids Immersion Lithography and maskless lithography, which appear to be still far from maturity. The project will cover the whole lithography supply chain including design, masks, materials, exposure tools, process integration, metrology and its final objective is the demonstration of 22nm node patterning on available 1.35 NA immersion tools on high complexity mask set.

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Pietro Cantu, Livio Baldi, Paolo Piacentini, Joost Sytsma, Bertrand Le Gratiet, Stéphanie Gaugiran, Patrick Wong, Hiroyuki Miyashita, Luisa Rita Atzei, Xavier Buch, Dick Verkleij, Olivier Toublan, Francesco Perez-Murano, and David Mecerreyes "LENS (lithography enhancement toward nano scale): a European project to support double exposure and double patterning technology development", Proc. SPIE 7640, Optical Microlithography XXIII, 764022 (3 March 2010); https://doi.org/10.1117/12.846030

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KEYWORDS

Double patterning technology

Photomasks

Lithography

Metrology

Etching

Optical lithography

Algorithm development

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