Improving copper CMP topography by dummy metal fill co-optimizing electroplating and CMP planarization

Li-Fu Chang; Zhong Fan; Daniel Lu; Alex Bao

doi:10.1117/12.845496

2 April 2010 Improving copper CMP topography by dummy metal fill co-optimizing electroplating and CMP planarization

Li-Fu Chang, Zhong Fan, Daniel Lu, Alex Bao

Author Affiliations +

Proceedings Volume 7641, Design for Manufacturability through Design-Process Integration IV; 76410W (2010) https://doi.org/10.1117/12.845496
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

In this paper, we present a dummy metal fill method based on co-optimization of both ECP and CMP processes. We present the layout dependent, minimum variance algorithm that matches not only metal densities across two-dimensional tiles of layout, but also the perimeters and shapes of metal lines in each tile. Using co-optimization as the fill criterion, our algorithm effectively minimizes the metal height differences as verified by model based CMP simulations. In addition, it also renders pre-characterization of fill constraints with respect to timing and signal integrity assurance. We also show our silicon data measured on a 65nm process that sufficiently provide proof of the method.

Citation Download Citation

Li-Fu Chang, Zhong Fan, Daniel Lu, and Alex Bao "Improving copper CMP topography by dummy metal fill co-optimizing electroplating and CMP planarization", Proc. SPIE 7641, Design for Manufacturability through Design-Process Integration IV, 76410W (2 April 2010); https://doi.org/10.1117/12.845496

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