Lower Defect Photomasks Using Focused Ion Beam (Fib) Repair

Terri D. Cambria

doi:10.1117/12.940359

30 June 1987 Lower Defect Photomasks Using Focused Ion Beam (Fib) Repair

Terri D. Cambria

Proceedings Volume 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI; (1987) https://doi.org/10.1117/12.940359
Event: Microlithography Conferences, 1987, Santa Clara, CA, United States

Abstract

The characteristics of a photomask repaired with a focused ion beam (FIB) are described. The edge-placement accuracy of the repair is +0.1 um, while the edge roughness is almost negligible for both clear and opaque repairs. Less than 3% of the repair sites are captured on an automatic photomask inspection system. Correlation between linewidth measurements on the photomask and wafers printed on a projection aligner show that variations of the line-edge are well within the +0.1 um placement accuracy of the FIB repair system. This means that truly zero-defect plates are possible with repair CD's the same as the lithography CD's.

Citation Download Citation

Terri D. Cambria "Lower Defect Photomasks Using Focused Ion Beam (Fib) Repair", Proc. SPIE 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI, (30 June 1987); https://doi.org/10.1117/12.940359

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