Time-resolved nonlinear optical-holographic techniques for investigation of non-equilibrium carrier dynamics in semiconductors

Kestutis Jarašiūnas

doi:10.1117/12.877108

21 February 2011 Time-resolved nonlinear optical-holographic techniques for investigation of non-equilibrium carrier dynamics in semiconductors

Kestutis Jarašiūnas

Author Affiliations +

Proceedings Volume 7937, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV; 79371W (2011) https://doi.org/10.1117/12.877108
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

A novel metrological approach bridges a dynamic holography and photoelectrical phenomena in semiconductors for monitoring the temporal and spatial non-equilibrium carrier dynamics. Light interference pattern of two coherent picosecond pulses was used to inject spatially modulated carrier pattern, modulate temporally the complex refractive index of a semiconductor, and thus create a light-induced transient diffraction grating (LITG). Recording of a thin grating at interband carrier generation with subsequent probing of spatial and temporal carrier dynamics by a delayed probe beam allowed investigation of various recombination mechanisms, covering linear, surface-limited, and nonlinear (bimolecular and Auger). Decay of LITG at its various spacings provided either the bipolar carrier mobility or minority one in heavily doped layers, diffusivity of degenerate plasma, as well revealed impact of carrier localization and band gap renormalization on carrier transport. Diffraction on thick Bragg gratings, recorded via deep impurity-assisted carrier generation revealed simultaneous index modulation by free-carriers, space-charge electric field, and recharged deep traps, thus enabling access to photoelectric parameters of the compensating centers. Grating decay in multiple quantum well structures (MQWS) provided carrier and spin relaxation rates, electron mobility, in-plane and cross-well transport. Spatial and temporal carrier dynamics in a wide excitation and temperature range is reviewed in a variety of III-nitride compounds (GaN, InGaN, AlGaN), GaAs, CdTe, InP, SiC, diamond films, and MQWS.

Citation Download Citation

Kestutis Jarašiūnas "Time-resolved nonlinear optical-holographic techniques for investigation of non-equilibrium carrier dynamics in semiconductors", Proc. SPIE 7937, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XV, 79371W (21 February 2011); https://doi.org/10.1117/12.877108

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