PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
Rigorous modal solutions of silicon nanowires are presented by using a H-field based finite element formulation. It is
shown that beam profiles of a circular nanowire are not circular. It is also shown that most of the optical power in a
silicon slot waveguide can be confined in the low-index slot region. It is shown here that dispersion properties can be
easily controlled by waveguide design of silicon nanowires, as waveguide dispersion dominates over the material
dispersion for such sub-wavelength optical structures. Bending losses of such silicon nanowires are also presented.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
B. M. A. Rahman, D. M. H. Leung, K. Namassivayane, T. Koshy, Z. J. Jiang, A. Law, H. Ahmed, K. T. V. Grattan, "Rigorous characterization of silicon nanowires and nanophotonic devices," Proc. SPIE 7943, Silicon Photonics VI, 79430H (18 January 2011); https://doi.org/10.1117/12.873067