E-beam patterning and stability study of sub-22nm HSQ pillars

Wei-Su Chen; Ming-Jinn Tsai

doi:10.1117/12.878590

15 April 2011 E-beam patterning and stability study of sub-22nm HSQ pillars

Wei-Su Chen, Ming-Jinn Tsai

Proceedings Volume 7972, Advances in Resist Materials and Processing Technology XXVIII; 79722V (2011) https://doi.org/10.1117/12.878590
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

E-beam exposed HSQ resist pillar (island) is commonly used as the hard mask for dry etching. However, HSQ pillar is prone to collapse without any substrate pre-treatment. CD resolution of HSQ pattern also depends on the aging effect. In this work, factors of (1) designed CD (DCD) (2) dose vs L/S ratio (3) beam current (4) underlayer (UL) (5) post-coat-delay (PCD) time before e-beam writing are studied for forming stable and reproducible sub-22 nm HSQ pillar. Three kinds of underlayer are evaluated, i.e. AR3-600, ZEP520A and TDUR-N700. Experimental results are summarized below. A wider dose window of forming sub-22 nm HSQ pillar with looser L/S ratio or smaller designed CD is obtained. CD variation for all pattern density conditions is due to the proximity effect from beam blur. AR3-600 is shown to be the most suitable UL for HSQ pillar. CD of HSQ pillar increases with thicker AR3-600 layer. PCD range for stable CDs of HSQ pillar with DCD of 20 nm is larger than that with 15 nm.

Citation Download Citation

Wei-Su Chen and Ming-Jinn Tsai "E-beam patterning and stability study of sub-22nm HSQ pillars", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79722V (15 April 2011); https://doi.org/10.1117/12.878590

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