Resonantly diode pumped Ho3+:YVO4 2.1-&#956;m laser

G. A. Newburgh; Mark Dubinskii

doi:10.1117/12.886571

25 May 2011 Resonantly diode pumped Ho³⁺:YVO₄ 2.1-μ laser

G. A. Newburgh, Mark Dubinskii

Proceedings Volume 8039, Laser Technology for Defense and Security VII; 803905 (2011) https://doi.org/10.1117/12.886571
Event: SPIE Defense, Security, and Sensing, 2011, Orlando, Florida, United States

Abstract

We report what is believed to be the first laser operation based on Ho³⁺-doped YVO₄. The Ho⁺³: YVO₄ was resonantly diode-pumped at ~1.93 μm to produce up to 1.6 W of continuous wave (CW) output power at ~2.054 μm. The laser had a slope efficiency of ~38% with respect to absorbed power. We have measured the absorption and stimulated emission cross sections of The Ho⁺³: YVO₄ at 77 K and present the calculated gain cross section spectrum at 77 K for different excited state inversion levels.

Citation Download Citation

G. A. Newburgh and Mark Dubinskii "Resonantly diode pumped Ho³⁺:YVO₄ 2.1-μ laser", Proc. SPIE 8039, Laser Technology for Defense and Security VII, 803905 (25 May 2011); https://doi.org/10.1117/12.886571

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