A novel method to eliminate the measurement artifacts of external quantum efficiency of multi-junction solar cells caused by the shunt effect

Jing-Jing Li; Swee Hoe Lim; Yong-Hang Zhang

doi:10.1117/12.912790

21 February 2012 A novel method to eliminate the measurement artifacts of external quantum efficiency of multi-junction solar cells caused by the shunt effect

Jing-Jing Li, Swee Hoe Lim, Yong-Hang Zhang

Author Affiliations +

Proceedings Volume 8256, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices; 825616 (2012) https://doi.org/10.1117/12.912790
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

A pulsed voltage bias method is proposed to eliminate the measurement artifacts of external quantum efficiency (EQE) of multi-junction solar cells. Under the DC voltage and light biases in the EQE measurements, the output current and voltage drops on the subcells under the chopped monochromatic light are affected by the low shunt resistances of the Ge subcells, which cause the EQE measurement artifacts for InGaP/InGaAs/Ge triple junction solar cells. A pulsed voltage bias superimposed on the DC voltage and light biases is used to properly control the output current and subcell voltages to eliminate the measurement artifacts. SPICE simulation confirms that the proposed method completely removes the measurement artifacts.

Citation Download Citation

Jing-Jing Li, Swee Hoe Lim, and Yong-Hang Zhang "A novel method to eliminate the measurement artifacts of external quantum efficiency of multi-junction solar cells caused by the shunt effect", Proc. SPIE 8256, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices, 825616 (21 February 2012); https://doi.org/10.1117/12.912790

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