Paper
23 February 2012 Optical properties of fluorine implanted ZnMgSe/ZnSe quantum-well nanostructures
Y. M. Kim, D. Sleiter, K. Sanaka, Y. Yamamoto, J. Meijer, K. Lischka, A. Pawlis
Author Affiliations +
Abstract
Here we demonstrate the ion-implantation of fluorine as an alternative doping method for ZnMgSe/ZnSe QWs. The photoluminescence measurements of F-implanted ZnSe QWs show the correlation between the number of sharp recombination peaks of F-donor bound-excitons and the implantation dose as well as the saturation of the luminescence intensity related to a donor. When special techniques such as selective implantation through a mask and registration of single ion impacts are applied on micro-, nano-cavities, the ion implantation can be an attractive alternative fluorine doping method for quantum information technology based on fluorine impurities in ZnSe.
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Y. M. Kim, D. Sleiter, K. Sanaka, Y. Yamamoto, J. Meijer, K. Lischka, and A. Pawlis "Optical properties of fluorine implanted ZnMgSe/ZnSe quantum-well nanostructures", Proc. SPIE 8272, Advances in Photonics of Quantum Computing, Memory, and Communication V, 827213 (23 February 2012); https://doi.org/10.1117/12.908173
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KEYWORDS
Fluorine

Quantum wells

Doping

Ions

Luminescence

Ion implantation

Excitons

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