High-power operation of a wide-striped InGaN laser diode array

Katsuya Samonji; Shinji Yoshida; Hiroyuki Hagino; Kazuhiko Yamanaka; Shinichi Takigawa

doi:10.1117/12.907936

8 February 2012 High-power operation of a wide-striped InGaN laser diode array

Katsuya Samonji, Shinji Yoshida, Hiroyuki Hagino, Kazuhiko Yamanaka, Shinichi Takigawa

Author Affiliations +

Proceedings Volume 8277, Novel In-Plane Semiconductor Lasers XI; 82771K (2012) https://doi.org/10.1117/12.907936
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

We successfully demonstrated a multi-striped InGaN-based laser diode (LD) array with an optical output power of 6.3 W under continuous wave operation. The LD array was operated on a conventional metal package without any cooling system. The world highest power operation as InGaN LD array is attributed to thermally optimized layout design taking advantage of highly efficient wide-striped emitters.

Citation Download Citation

Katsuya Samonji, Shinji Yoshida, Hiroyuki Hagino, Kazuhiko Yamanaka, and Shinichi Takigawa "High-power operation of a wide-striped InGaN laser diode array", Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82771K (8 February 2012); https://doi.org/10.1117/12.907936

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE