Paper
22 November 2011 X-ray moiré patterns of silicon crystals with distortions caused by local concentrated forces
Igor M. Fodchuk, Igor V. Fesiv, Sergiy M, Novikov, Yaroslav M. Struk
Author Affiliations +
Proceedings Volume 8338, Tenth International Conference on Correlation Optics; 833819 (2011) https://doi.org/10.1117/12.921007
Event: Correlation Optics 2011, 2011, Chernivsti, Ukraine
Abstract
We study the mechanisms of forming X-ray moiré images arising under the action of one-dimensional rows of local concentrated forces at output surface of a surface of triple-crystalline-interferometer for the cases of orientation of them parallel and perpendicular to the vector of diffraction. Presence of constant phase shift of one of the interfering waves in the interferometer's analyzer results in diminishing of period, contrast and area of deformation moiré fringes. It is shown that the area of efficient interaction of phase and deformation moirés depends on both the magnitude of the constant phase shift and on the magnitude and character of arrangement of local concentrated forces in rows.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Igor M. Fodchuk, Igor V. Fesiv, Sergiy M, Novikov, and Yaroslav M. Struk "X-ray moiré patterns of silicon crystals with distortions caused by local concentrated forces", Proc. SPIE 8338, Tenth International Conference on Correlation Optics, 833819 (22 November 2011); https://doi.org/10.1117/12.921007
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Cited by 2 scholarly publications.
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KEYWORDS
Crystals

X-rays

Diffraction

Moire patterns

Silicon

Interferometers

Reflection

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