Modeling of the type-II InGaAs/GaAsSb quantum well designs for mid-infrared laser diodes by k-p method

Baile Chen; A. L. Holmes Jr.; Viktor Khalfin; Igor Kudryashov; Bora M. Onat

doi:10.1117/12.918764

7 May 2012 Modeling of the type-II InGaAs/GaAsSb quantum well designs for mid-infrared laser diodes by k•p method

Baile Chen, A. L. Holmes Jr., Viktor Khalfin, Igor Kudryashov, Bora M. Onat

Proceedings Volume 8381, Laser Technology for Defense and Security VIII; 83810F (2012) https://doi.org/10.1117/12.918764
Event: SPIE Defense, Security, and Sensing, 2012, Baltimore, Maryland, United States

Abstract

Different type-II InGaAs/GaAsSb quantum well design structures on InP substrate for mid-infrared emission has been modeled by six band k•p method. The dispersion relations, optical matrix element, optical gain and spontaneous emission rate are calculated. The effects of the parameters of quantum wells (thickness, composition) and properties of cladding layers were investigated. For injected carrier concentration of 5×10¹² cm^-2, peak gain values around 2.6-2.7 μm wavelengths of the order of 1000 cm^-1 can be achieved, which shows that type-II InGaAs/GaAsSb quantum wells are suitable for infrared laser operation beyond 2μm at room temperature.

Citation Download Citation

Baile Chen, A. L. Holmes Jr., Viktor Khalfin, Igor Kudryashov, and Bora M. Onat "Modeling of the type-II InGaAs/GaAsSb quantum well designs for mid-infrared laser diodes by k•p method", Proc. SPIE 8381, Laser Technology for Defense and Security VIII, 83810F (7 May 2012); https://doi.org/10.1117/12.918764

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