Avalanche Photodiodes For High-Bit-Rate Lightwave Systems

J. C. Campbell

doi:10.1117/12.942557

4 February 1988 Avalanche Photodiodes For High-Bit-Rate Lightwave Systems

J. C. Campbell

Proceedings Volume 0839, Components for Fiber Optic Applications II; (1988) https://doi.org/10.1117/12.942557
Event: Cambridge Symposium on Fiber Optics and Integrated Optoelectronics, 1987, Cambridge, MA, United States

Abstract

Avalanche photodiodes (APDs) capable of providing useful gain at microwave frequencies are vital components for future multi-gigabit/s lightwave transmission systems. To date, the APD structure that has shown the most promise for high frequency operation consists of a wide-bandgap multiplication region and a narrow-bandgap absorbing layer separated by a transition region to reduce charge accumulation at the heterojunction interfaces (SAGM-APD). InP/InGaAsP/InGaAs APDs of this type have exhibited bandwidths as high as 8 GHz and gain-bandwidth products of 70 GHz. In this paper we discus the physical effects that determine their speed and project performance limits.

Citation Download Citation

J. C. Campbell "Avalanche Photodiodes For High-Bit-Rate Lightwave Systems", Proc. SPIE 0839, Components for Fiber Optic Applications II, (4 February 1988); https://doi.org/10.1117/12.942557

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