Statistical analysis of 10+ years field exposed c-Si modules performance degradation

Joseph M. Kuitche; Govindasamy TamizhMani; Rong Pan

doi:10.1117/12.930436

16 October 2012 Statistical analysis of 10+ years field exposed c-Si modules performance degradation

Joseph M. Kuitche, Govindasamy TamizhMani, Rong Pan

Proceedings Volume 8472, Reliability of Photovoltaic Cells, Modules, Components, and Systems V; 84720C (2012) https://doi.org/10.1117/12.930436
Event: SPIE Solar Energy + Technology, 2012, San Diego, California, United States

Abstract

In our previous study¹, visual inspections and infra-red (IR) scanning were performed on about 2,000 modules that have been operating under the dry and hot Arizona climate for 10 - 17 years. Most of these modules were installed on 1-axis trackers and grid-connected; and some were installed on a fixed latitude tilt rack in a standalone system. The modules were inspected against a list of historically known field failure modes, but restricted to those that could be visually observed or through IR. An analysis of the data revealed both positive and negative correlations between the failure modes. Failure chains could be constructed from those correlations; such as (1) Discoloration of encapsulant – cell discoloration, and (2) Delamination – broken/chipped cells. This study focuses on modules installed on 2-axis trackers between 8 and 13 years. Statistical degradation analysis is performed on power output data collected throughout the exposure period. The electroluminescence imaging and a more thorough IR scanning are performed on limited (available) samples to complement the visual inspection data from the previous study. This paper also looks into the correlation between those inspection results and the performance degradation data. The objective of this paper is twofold: (1) to present a statistical analysis result of degradation data for field exposed crystalline silicon modules installed on 2-axis trackers between 8 and 13 years. The analysis should provide reliability prediction for up to 30 years of field operation. (2) To investigate the correlation between performance degradation and inspection data. Inspections include visual observations, IR scanning, and electroluminescence imaging.

Citation Download Citation

Joseph M. Kuitche, Govindasamy TamizhMani, and Rong Pan "Statistical analysis of 10+ years field exposed c-Si modules performance degradation", Proc. SPIE 8472, Reliability of Photovoltaic Cells, Modules, Components, and Systems V, 84720C (16 October 2012); https://doi.org/10.1117/12.930436

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available