Dry etching technologies for reflective multilayer

Yoshinori Iino; Makoto Karyu; Hirotsugu Ita; Yoshihisa Kase; Tomoaki Yoshimori; Makoto Muto; Mikio Nonaka; Munenori Iwami

doi:10.1117/12.1000107

8 November 2012 Dry etching technologies for reflective multilayer

Yoshinori Iino, Makoto Karyu, Hirotsugu Ita, Yoshihisa Kase, Tomoaki Yoshimori, Makoto Muto, Mikio Nonaka, Munenori Iwami

Author Affiliations +

Proceedings Volume 8522, Photomask Technology 2012; 85222I (2012) https://doi.org/10.1117/12.1000107
Event: SPIE Photomask Technology, 2012, Monterey, California, United States

Abstract

We have developed a highly integrated methodology for patterning Extreme Ultraviolet (EUV) mask, which has been highlighted for the lithography technique at the 14nm half-pitch generation and beyond. The EUV mask is characterized as a reflective-type mask which is completely different compared with conventional transparent-type of photo mask. And it requires not only patterning of absorber layer without damaging the underlying multi reflective layers (40 Si/Mo layers) but also etching multi reflective layers. In this case, the dry etch process has generally faced technical challenges such as the difficulties in CD control, etch damage to quartz substrate and low selectivity to the mask resist. Shibaura Mechatronics ARESTM mask etch system and its optimized etch process has already achieved the maximal etch performance at patterning two-layered absorber. And in this study, our process technologies of multi reflective layers will be evaluated by means of optimal combination of process gases and our optimized plasma produced by certain source power and bias power. When our ARES™ is used for multilayer etching, the user can choose to etch the absorber layer at the same time or etch only the multilayer.

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Yoshinori Iino, Makoto Karyu, Hirotsugu Ita, Yoshihisa Kase, Tomoaki Yoshimori, Makoto Muto, Mikio Nonaka, and Munenori Iwami "Dry etching technologies for reflective multilayer", Proc. SPIE 8522, Photomask Technology 2012, 85222I (8 November 2012); https://doi.org/10.1117/12.1000107

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