Role of diffusion and parasitic effects on the frequency response of a Si-CMOS photodetector

Paulami Rakshit; N. R. Das

doi:10.1117/12.925284

15 October 2012 Role of diffusion and parasitic effects on the frequency response of a Si-CMOS photodetector

Paulami Rakshit, N. R. Das

Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85492N (2012) https://doi.org/10.1117/12.925284
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India

Abstract

In this paper, the frequency response of a VLSI compatible Si-CMOS p-i-n photodetector suitable for high-speed, lowvoltage operation is studied. The model is developed considering the effects of diffusion of carriers from the substrate region and the parasitic elements due to the presence of multiple diodes in lateral configuration. The current density is calculated considering square-area photodetector. Results indicate the possibility of optimum designs to maximize 3dB bandwidth.

Citation Download Citation

Paulami Rakshit and N. R. Das "Role of diffusion and parasitic effects on the frequency response of a Si-CMOS photodetector", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85492N (15 October 2012); https://doi.org/10.1117/12.925284

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available