Semipolar GaN growth on patterned sapphire substrates by hydride vapor phase epitaxy

K. Yamane; N. Okada; H. Furuya; K. Tadatomo

doi:10.1117/12.2007376

4 March 2013 Semipolar GaN growth on patterned sapphire substrates by hydride vapor phase epitaxy

K. Yamane, N. Okada, H. Furuya, K. Tadatomo

Proceedings Volume 8625, Gallium Nitride Materials and Devices VIII; 862503 (2013) https://doi.org/10.1117/12.2007376
Event: SPIE OPTO, 2013, San Francisco, California, United States

Abstract

This paper presents the growth of thick semipolar {10-11}, {11-22}, and {20-21} GaN layers on n, r, and {22-43} patterned sapphire substrates (PSSs), respectively, by hydride vapor phase epitaxy. The reduction rate of the dislocation density varied with growth planes. For {10-11} GaN layers, the dislocation density drastically decreased at over 100 μm, which was as fast the reduction rate as in the case of the c-plane. It was revealed that the reduction rate of the dislocation density could be controlled by the proper selection of the growth plane. We obtained a freestanding GaN of 2 inch diameter. Thick GaN growth led to the self-separation of the GaN layer from the PSS during cooling process. The separation plane formed at the interface between GaN and PSS, which is different from the case of a conventional c-plane GaN/sapphire. The separationability of the GaN layer from the PSS depended on the selective growth area of the sapphire sidewall.

Citation Download Citation

K. Yamane, N. Okada, H. Furuya, and K. Tadatomo "Semipolar GaN growth on patterned sapphire substrates by hydride vapor phase epitaxy", Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 862503 (4 March 2013); https://doi.org/10.1117/12.2007376

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