Limitation of OAI + AttPSM in EUVL

Shinn-Sheng Yu; Yen-Cheng Lu; Chih-Tsung Shih; Jack J. H. Chen; Anthony Yen

doi:10.1117/12.2010943

1 April 2013 Limitation of OAI + AttPSM in EUVL

Shinn-Sheng Yu, Yen-Cheng Lu, Chih-Tsung Shih, Jack J. H. Chen, Anthony Yen

Proceedings Volume 8679, Extreme Ultraviolet (EUV) Lithography IV; 86791L (2013) https://doi.org/10.1117/12.2010943
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

In extreme ultraviolet lithography (EUVL), the application of off-axis illumination (OAI) leads to degradation in aerial image contrast, resulting in an unacceptably high mask error enhancement factor as the pattern pitch becomes smaller, even if an attenuated phase-shifting mask (AttPSM) of optimized attenuation is employed. We show that this is an intrinsic problem of OAI and cannot be remedied by adopting a thinner absorber, a smaller chief ray angle of incidence at the object side, or a projection optics box with a higher numerical aperture. Based on simulation results using the best conditions for OAI, we may conclude that single-patterning EUVL will probably end at a technology node with the minimum pitch of 22 nm, unless we can come up with other innovative ways for performing EUVL imaging or designing and formulating resists with blurs less than 5 nm at reasonable exposure dose.

Citation Download Citation

Shinn-Sheng Yu, Yen-Cheng Lu, Chih-Tsung Shih, Jack J. H. Chen, and Anthony Yen "Limitation of OAI + AttPSM in EUVL", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86791L (1 April 2013); https://doi.org/10.1117/12.2010943

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