Noise characteristics of nanoscaled SOI MOSFETs

Nataliya Lukyanchikova; Nikolay Garbar; Valeriya Kudina; Alexander Smolanka; Eddy Simoen; Cor Claeys

doi:10.1117/12.2017358

8 January 2013 Noise characteristics of nanoscaled SOI MOSFETs

Nataliya Lukyanchikova, Nikolay Garbar, Valeriya Kudina, Alexander Smolanka, Eddy Simoen, Cor Claeys

Proceedings Volume 8700, International Conference Micro- and Nano-Electronics 2012; 87000N (2013) https://doi.org/10.1117/12.2017358
Event: International Conference on Micro-and Nano-Electronics 2012, 2012, Zvenlgorod, Russian Federation

Abstract

The low-frequency noise behavior of nanoscaled fully-depleted silicon-on insulator (SOI) finFETs is investigated and the perspectives of the noise method as a non-destructive diagnostic tool are revealed. The analysis of the (1/f)^γ McWhorter noise observed at zero back-gate voltage showed that the trap concentration N_ot appears to be lower in the case of devices with HfSiON/SiO₂ gate dielectric with the uniaxial strain in the inversion channel while the implementation of the HfO₂/SiO₂ gate stack and the biaxial strain tend to increase the value of N_ot. The analysis of the back-gate-induced (BGI) and linear kink effect (LKE) Lorentzian noise observed when the back interface is biased in accumulation allowed to estimate the values proportional to equivalent capacitance C_eq. Their front-gate voltage dependencies appear to be different for the devices with HfSiON/SiO₂ and HfO₂/SiO₂ gate dielectric. Also the values proportional to density of the electron-valence-band tunneling currents j_EVB were found for the devices studied. The influence of the strain-inducing techniques and gate dielectric type on the values discussed is revealed.

Citation Download Citation

Nataliya Lukyanchikova, Nikolay Garbar, Valeriya Kudina, Alexander Smolanka, Eddy Simoen, and Cor Claeys "Noise characteristics of nanoscaled SOI MOSFETs", Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 87000N (8 January 2013); https://doi.org/10.1117/12.2017358

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