A High Density Anodized Aluminum Microstrip Structure For High Speed Interconnections

W. C. Dillard; J. L. Davidson; R. C. Jaeger

doi:10.1117/12.943669

6 April 1988 A High Density Anodized Aluminum Microstrip Structure For High Speed Interconnections

W. C. Dillard, J. L. Davidson, R. C. Jaeger

Proceedings Volume 0871, Space Structures, Power, and Power Conditioning; (1988) https://doi.org/10.1117/12.943669
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States

Abstract

A new interconnect structure formed by the selective anodization of aluminum thin films is examined. Interconnect lines of aluminum embedded in anodic aluminum oxide dielectric were fabricated. Resistivity of the lines was determined to be - 3.1 μΩcm. This value compares well to the bulk value of 2.8 μΩ.cm Crosstalk is expected to be < 10%.

Citation Download Citation

W. C. Dillard, J. L. Davidson, and R. C. Jaeger "A High Density Anodized Aluminum Microstrip Structure For High Speed Interconnections", Proc. SPIE 0871, Space Structures, Power, and Power Conditioning, (6 April 1988); https://doi.org/10.1117/12.943669

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