Laser Processing For Interconnect Technology

H S Cole; Y S Liu; R Guida; J Rose

doi:10.1117/12.943946

18 May 1988 Laser Processing For Interconnect Technology

H S Cole, Y S Liu, R Guida, J Rose

Proceedings Volume 0877, Micro-Optoelectronic Materials; (1988) https://doi.org/10.1117/12.943946
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States

Abstract

Laser processing of polyimide dielectric layers for use in high-density interconnect structures was studied. A pulsed excimer laser was used to photoetch via holes and a CW argon ion laser operating at 351 nm was used to selectively deposit catalytic amounts of palladium on polyimide. Subsequent immersion of the irradiated samples in an electroless copper solution resulted in selective copper deposition.

Citation Download Citation

H S Cole, Y S Liu, R Guida, and J Rose "Laser Processing For Interconnect Technology", Proc. SPIE 0877, Micro-Optoelectronic Materials, (18 May 1988); https://doi.org/10.1117/12.943946

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