Nanostructured composite thin films with tailored resistivity by atomic layer deposition

Anil U. Mane; Jeffrey W. Elam

doi:10.1117/12.2024482

19 September 2013 Nanostructured composite thin films with tailored resistivity by atomic layer deposition

Anil U. Mane, Jeffrey W. Elam

Proceedings Volume 8818, Nanostructured Thin Films VI; 88180M (2013) https://doi.org/10.1117/12.2024482
Event: SPIE NanoScience + Engineering, 2013, San Diego, California, United States

Abstract

We have developed a new type of thin film composite material comprised of Mo:Al₂O₃ consisting of conducting metal nanoclusters embedded in an insulating Al₂O₃ matrix. These nanocomposite thin films were prepared by atomic layer deposition (ALD). Quartz crystal microbalance (QCM) experiments performed with various Mo cycle percentages revealed that the Mo ALD inhibits the Al₂O₃ ALD and vice versa. Despite this inhibition, the relationship between Mo content in the films and cycle percentage was close to expectations. Depth profiling X-ray photoelectron spectroscopy (XPS) showed that the Mo:Al₂O₃ films were uniform in composition and contained Al, O, and metallic Mo as expected, but also included significant F and C. Cross sectional TEM revealed the composite film structure to be metallic nanoparticles (2-3nm) embedded uniformly in an amorphous Al₂O₃ insulating matrix. The resistivity of these composite films could be tailored in the range of 10⁴ -10¹² Ohm-cm by adjusting the Mo ALD cycle percentage. These nanocomposite films have been used as resistive coatings in microchannel plate (MCP) fabrication and as charge-drain coatings in micro-electron-optical devices. Here we report the ALD growth characterization, and application of these of Mo:Al₂O₃, films.

Citation Download Citation

Anil U. Mane and Jeffrey W. Elam "Nanostructured composite thin films with tailored resistivity by atomic layer deposition", Proc. SPIE 8818, Nanostructured Thin Films VI, 88180M (19 September 2013); https://doi.org/10.1117/12.2024482

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