High temperature operating (>80oC) 795-nm VCSEL based on InAlGaAs MQWs active region

Jian Zhang; Yongqiang Ning; Jianwei Zhang; Xing Zhang; Lijun Wang

doi:10.1117/12.2032212

17 September 2013 High temperature operating (>80°C) 795-nm VCSEL based on InAlGaAs MQWs active region

Jian Zhang, Yongqiang Ning, Jianwei Zhang, Xing Zhang, Lijun Wang

Proceedings Volume 8904, International Symposium on Photoelectronic Detection and Imaging 2013: High Power Lasers and Applications; 89041Q (2013) https://doi.org/10.1117/12.2032212
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China

Abstract

Design of the active region and analysis of temperature sensitivity of high-temperature operating 795-nm special VCSELs for Chip-Scale Atomic Clock (CSAC) are presented. Composition and thickness of the InAlGaAs multiple quantum wells (MQWs) are optimized at room and elevated temperatures. Temperature sensitivity of the threshold current is analyzed by calculating the temperature dependence of cavity-mode gain over a broad temperature range (25°C-150°C). A self-consistent VCSEL model based on quasi 3D finite element analysis is employed to investigate selfheating effects and temperature distribution in the proposed structure. Output power of 2.5mW is expected from 10μm aperture VCSELs at 10mA current at ambient temperature of 358K.

Citation Download Citation

Jian Zhang, Yongqiang Ning, Jianwei Zhang, Xing Zhang, and Lijun Wang "High temperature operating (>80°C) 795-nm VCSEL based on InAlGaAs MQWs active region", Proc. SPIE 8904, International Symposium on Photoelectronic Detection and Imaging 2013: High Power Lasers and Applications, 89041Q (17 September 2013); https://doi.org/10.1117/12.2032212

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