Research on mechanical shock impact of GaAs photocathode photoemission performance

Feng Shi; Hong-chang Cheng; Xiao-feng Bai; Lei Yan; Gang-cheng Jiao

doi:10.1117/12.2034004

16 August 2013 Research on mechanical shock impact of GaAs photocathode photoemission performance

Feng Shi, Hong-chang Cheng, Xiao-feng Bai, Lei Yan, Gang-cheng Jiao

Proceedings Volume 8912, International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications; 89120W (2013) https://doi.org/10.1117/12.2034004
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China

Abstract

The GaAs photocathode has been widely used in optoelectronic devices such as image intensifiers and photomultiplier tubes, but it is inevitable for these devices to withstand a variety of mechanical shock. In order to study the impact on the GaAs photocathode’s photoemission performance caused by mechanical shock, GaAs photocathode image intensifier is researched in this paper . The spectral response of the GaAs photocathode was tested respectively before and after several value of mechanical shock（the value of mechanical shock:55g，65g，75g，85g and 95g）.The parameter of the GaAs photocathode can be calculated and the quantum efficiency curve can be fitted as well using the MATLAB software. The results show that surface escape probability is increased after photocathode is subjected to mechanical shock, so that its photoemission performance will be improved. We think this phenomenon is due to the GaAs photocathode surface Cs-O reconstruction. This finding provided a new method to enhance the photoemission performance of photocathode.

Citation Download Citation

Feng Shi, Hong-chang Cheng, Xiao-feng Bai, Lei Yan, and Gang-cheng Jiao "Research on mechanical shock impact of GaAs photocathode photoemission performance", Proc. SPIE 8912, International Symposium on Photoelectronic Detection and Imaging 2013: Low-Light-Level Technology and Applications, 89120W (16 August 2013); https://doi.org/10.1117/12.2034004

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KEYWORDS

Gallium arsenide

Quantum efficiency

Image intensifiers

Diffusion

Interfaces

Absorption

Optoelectronic devices

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