Picosecond laser structuring of monocrystalline silicon surface

Igor Guk; Galina Shandybina; Eugeny Yakovlev; Leonid Golovan

doi:10.1117/12.2053549

28 November 2013 Picosecond laser structuring of monocrystalline silicon surface

Igor Guk, Galina Shandybina, Eugeny Yakovlev, Leonid Golovan

Proceedings Volume 9065, Fundamentals of Laser-Assisted Micro- and Nanotechnologies 2013; 90650R (2013) https://doi.org/10.1117/12.2053549
Event: Fundamentals of Laser Assisted Micro- and Nanotechnologies 2013, 2013, St. Petersburg, Russian Federation

Abstract

The results of the study of the polariton mechanism of microstructuring of silicon in near-IR range during irradiation by picosecond laser pulses are presented to discussion. The experimental results of influence of laser pulses (1064 nm, 33 ps) on silicon in the dependence of laser energy, focusing conditions and number of pulses, as well as numerical modeling of conditions of excitation of the surface polaritons are presented. Low probability of surface polaritons excitation during picosecond laser irradiation is shown.

Citation Download Citation

Igor Guk, Galina Shandybina, Eugeny Yakovlev, and Leonid Golovan "Picosecond laser structuring of monocrystalline silicon surface", Proc. SPIE 9065, Fundamentals of Laser-Assisted Micro- and Nanotechnologies 2013, 90650R (28 November 2013); https://doi.org/10.1117/12.2053549

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