Paper
16 December 2013 The influence of precursor films on CIGS films prepared by ion beam sputtering deposition
Jun Zhao, Ping Fan, Guangxing Liang, Zhuanghao Zheng, Dongping Zhang, Chaoming Chen
Author Affiliations +
Proceedings Volume 9068, Eighth International Conference on Thin Film Physics and Applications; 90681H (2013) https://doi.org/10.1117/12.2054017
Event: Eighth International Conference on Thin Film Physics and Applications (TFPA13), 2013, Shanghai, China
Abstract
The CuInGa(CIG) precursor films were grown by ion beam sputtering continuously CuGa/CuIn and CuIn/CuGa, and then selenized CIG to fabricate CIGS absorber films on molybdenum substrates . They were annealed in the same vacuum chamber and under the same temperature (500°C). The CIGS thin films were characterized with X-ray diffraction (XRD), Energy dispersive spectroscopy (EDS) and scanning electron microscopy (SEM) in order to study the microstructures, composition, surface morphology, electrical properties, respectively. The results showed that the CIGS thin films appeared smooth and compact with a sequence of Mo/CuGa/CuIn/Se, which were mainly of chalcopyrite structure. The CIGS thin films got the strongest diffraction peak intensity and were with good crystalline quality.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jun Zhao, Ping Fan, Guangxing Liang, Zhuanghao Zheng, Dongping Zhang, and Chaoming Chen "The influence of precursor films on CIGS films prepared by ion beam sputtering deposition", Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 90681H (16 December 2013); https://doi.org/10.1117/12.2054017
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KEYWORDS
Copper indium gallium selenide

Sputter deposition

Thin films

Ion beams

Copper

Scanning electron microscopy

Molybdenum

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