Paper
1 January 1988 A New Reticle Set For Electrical Measurement Of Resolution, Proximity, Topography, Sidewall Spacer, And Stacked-Gate Structures
W. L. Stevenson
Author Affiliations +
Abstract
The characterization of photolithographic resolution, proximity-imaging effects, topographic dependence, side-wall spacers, and stacked-gate etch is greatly facilitated through the use of microelectronic test structures. The test modules required were specifically designed to mimick typical linewidth structures that occur as a result of integrated circuit processing. The modules were designed into a generic test reticle set. The reticle set has been implemented on ASM, GCA, Nikon, and Ultratech Steppers. This paper describes the test structures, the measurement sequences, and presents examples of results to demonstrate the versatility and application of this design.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. L. Stevenson "A New Reticle Set For Electrical Measurement Of Resolution, Proximity, Topography, Sidewall Spacer, And Stacked-Gate Structures", Proc. SPIE 0921, Integrated Circuit Metrology, Inspection, and Process Control II, (1 January 1988); https://doi.org/10.1117/12.968363
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Reticles

Resistors

Semiconducting wafers

Etching

Integrated circuits

Monochromatic aberrations

Oxides

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