Physical properties of ITO thin films prepared by ion-assisted electron beam evaporation

Yang Qiu; Yangli Jin; Hua Zhao; Bo Xu; Jiajia Wang

doi:10.1117/12.2071544

18 December 2014 Physical properties of ITO thin films prepared by ion-assisted electron beam evaporation

Yang Qiu, Yangli Jin, Hua Zhao, Bo Xu, Jiajia Wang

Proceedings Volume 9295, International Symposium on Optoelectronic Technology and Application 2014: Laser Materials Processing; and Micro/Nano Technologies; 929505 (2014) https://doi.org/10.1117/12.2071544
Event: International Symposium on Optoelectronic Technology and Application 2014, 2014, Beijing, China

Abstract

Tin doped indium oxide (ITO) thin films were prepared on IR glass substrates at different oxygen flow rate by ion-assisted electron beam evaporation method. Properties such as microstructure, morphology, sheet resistance and optical transmittance were investigated by X-ray diffractometer, SEM, four-point probe and UV-VIS-IR spectrophotometer, respectively. Lattice constant, inner stress level and energy band gap (Eg) of ITO thin films as-deposited were calculated and discussed. The mechanical properties of ITO thin films were studied by scratching method. The measurements were performed by scratch tester and the results were recorded as acoustic emission spectra and scratch track images taken by SEM. Relationship between inner stress level and mechanical performance was investigated in detail.

Citation Download Citation

Yang Qiu, Yangli Jin, Hua Zhao, Bo Xu, and Jiajia Wang "Physical properties of ITO thin films prepared by ion-assisted electron beam evaporation", Proc. SPIE 9295, International Symposium on Optoelectronic Technology and Application 2014: Laser Materials Processing; and Micro/Nano Technologies, 929505 (18 December 2014); https://doi.org/10.1117/12.2071544

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