Growth And Characteristics Of Organic-On-Inorganic Semiconductor Heterostructures

F. F. So; S. R. Forrest

doi:10.1117/12.947376

15 August 1988 Growth And Characteristics Of Organic-On-Inorganic Semiconductor Heterostructures

F. F. So, S. R. Forrest

Proceedings Volume 0944, Growth of Compound Semiconductor Structures II; (1988) https://doi.org/10.1117/12.947376
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

Recently, several crystalline organic semiconductors have been found to form rectifying heterojunctions when deposited onto inorganic semiconductor substrates. In this paper, we discuss the growth and characterization of these organic-on-inorganic (0I) heterostructures. Both the purification of organic materials, and the fabrication procedures for OI heterostructures are described in detail. The electrical properties, as well as the microstructure of the organic material are found to be very sensitive to the deposition conditions. The valence band discontinuity at the OI heterojunction is measured for the first time, using both forward current-voltage characteristics and internal photo-emission. The interface state densities have been studied for several different organic semiconductors deposited on p-Si substrates. A model is proposed to account for the observed results.

Citation Download Citation

F. F. So and S. R. Forrest "Growth And Characteristics Of Organic-On-Inorganic Semiconductor Heterostructures", Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); https://doi.org/10.1117/12.947376

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