Design and main characteristics of high performance fast neutral beam sources based on the ion sources with a cold cathode and a closed drift of electrons in crossed electrical and magnetic fields are described. The output beam is of practically 100% neutrality and has a low level of divergence (<5º) which provides long distance transportation of neutral beams. Etching results for Si, SiO2, W, NbN, TiN, and TiC with using the working gases Ar, CF4, C3F8, and SF6 are given. Preliminary results for the build-in charge decreasing effect for the Si/SiO2 interface under a neutral beam treatment are presented.
|