Reactive Ion Etching Of Laser Structures

G. Allen Vawter

doi:10.1117/12.947383

16 August 1988 Reactive Ion Etching Of Laser Structures

G. Allen Vawter

Proceedings Volume 0945, Advanced Processing of Semiconductor Devices II; (1988) https://doi.org/10.1117/12.947383
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

In recent years interest in dry-etch processing of laser struc-tures has grown dramatically. Reactive-ion-etching (RIE) has developed from a high resolution pattern transfer technique for silicon in-tegrated circuit processing into a successful method for fabricating the smooth, vertical facets required by double heterostructure (DH) lasers. However, in addition to RIE several other new plasma processes have been developed and applied to the developement of dry etched laser structures. This paper reviews the motivations behind this work, provides some examples of recent developements in the field of dry-etching as applied to DH laser structures and attempts to point out some of the problems associated with dry etching of optoelectronic devices.

Citation Download Citation

G. Allen Vawter "Reactive Ion Etching Of Laser Structures", Proc. SPIE 0945, Advanced Processing of Semiconductor Devices II, (16 August 1988); https://doi.org/10.1117/12.947383

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