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5 October 2015 Evaluation of different processing steps on the dark current of electron-injection detectors (Presentation Recording)
Mohsen Rezaei, Sung Jun Jang, Hooman Mohseni
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Proceedings Volume 9555, Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications; 95550A (2015) https://doi.org/10.1117/12.2188755
Event: SPIE Nanoscience + Engineering, 2015, San Diego, California, United States
Abstract
Our recently published results show a much reduced dark current and enhanced speed from our second-generation electron-Injection detectors, due to the introduction of an isolation method. However, these results have been limited to single-element detectors. A natural next step is to incorporate these new devices into a focal plane array (FPA), since we have already achieved very attractive results from an FPA based on the first-generation devices. Despite the high-performance characteristics of second generation devices, isolation introduces new processing steps and a robust procedure is required for realization of focal plane arrays (FPA) with good uniformity and yield. Here we report our systematic evaluation of the processing steps, and in particular the effect of the processing temperature, on the device dark current and uniformity. Our goal is to produce ultra-low dark current FPA based on isolated electron-injection detectors, and to approach single-photon sensitivity.
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Mohsen Rezaei, Sung Jun Jang, and Hooman Mohseni "Evaluation of different processing steps on the dark current of electron-injection detectors (Presentation Recording)", Proc. SPIE 9555, Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications, 95550A (5 October 2015); https://doi.org/10.1117/12.2188755
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KEYWORDS
Staring arrays
Sensors
Current controlled current source
Nanostructuring
Optical imaging
Optical sensing
Photon counting
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