Grapho-epitaxial sub-10nm line and space patterning using lamellar-forming Si-containing block copolymer

Hironobu Sato; Yusuke Kasahara; Naoko Kihara; Yuriko Seino; Ken Miyagi; Shinya Minegishi; Hitoshi Kubota; Katsutoshi Kobayashi; Hideki Kanai; Katsuyoshi Kodera; Yoshiaki Kawamonzen; Masayuki Shiraishi; Hitoshi Yamano; Satoshi Nomura; Tsukasa Azuma; Teruaki Hayakawa

doi:10.1117/12.2218758

1 April 2016 Grapho-epitaxial sub-10nm line and space patterning using lamellar-forming Si-containing block copolymer

Hironobu Sato, Yusuke Kasahara, Naoko Kihara, Yuriko Seino, Ken Miyagi, Shinya Minegishi, Hitoshi Kubota, Katsutoshi Kobayashi, Hideki Kanai, Katsuyoshi Kodera, Yoshiaki Kawamonzen, Masayuki Shiraishi, Hitoshi Yamano, Satoshi Nomura, Tsukasa Azuma, Teruaki Hayakawa

Author Affiliations +

Proceedings Volume 9777, Alternative Lithographic Technologies VIII; 97771S (2016) https://doi.org/10.1117/12.2218758
Event: SPIE Advanced Lithography, 2016, San Jose, California, United States

Abstract

Si-rich poly((polyhedral oligomeric silsesquioxane) methacrylate)-b-poly(trifluoroethyl methacrylate) (PMAPOSS-b- PTFEMA) was used to form 8-nm half-pitch line and space (L/S) pattern via grapho-epitaxy. Vertical alignment of the lamellae was achieved without using either a neutral layer or top-coating material. Because PMAPOSS-b-PTFEMA forms vertical lamellae on a variety of substrates, we used two types of physical guide structures for grapho-epitaxy; one was a substrate guide and the other was a guide with an embedded under layer. On the substrate guide structure, a fine L/S pattern was obtained with trench widths equal to 3–7 periods of the lamella spacing of the block copolymer, L_o. However, on the embedded under layer guide structure, L/S pattern was observed only with 3 L_o and 4 L_o in trench width. Cross-sectional transmission electron microscope images revealed that a thick PMAPOSS layer was formed under the PMAPOSS-b-PTFEMA L/S pattern. Pattern transfer of the PMAPOSS-b-PTFEMA L/S pattern was prevented by a thick PMAPOSS layer. To achieve pattern transfer to the under layer, optimization of the surface properties is necessary.

Citation Download Citation

Hironobu Sato, Yusuke Kasahara, Naoko Kihara, Yuriko Seino, Ken Miyagi, Shinya Minegishi, Hitoshi Kubota, Katsutoshi Kobayashi, Hideki Kanai, Katsuyoshi Kodera, Yoshiaki Kawamonzen, Masayuki Shiraishi, Hitoshi Yamano, Satoshi Nomura, Tsukasa Azuma, and Teruaki Hayakawa "Grapho-epitaxial sub-10nm line and space patterning using lamellar-forming Si-containing block copolymer", Proc. SPIE 9777, Alternative Lithographic Technologies VIII, 97771S (1 April 2016); https://doi.org/10.1117/12.2218758

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
6 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Transmission electron microscopy

Directed self assembly

Etching

Silicon

Electron microscopes

Lithography

Reactive ion etching

Show All Keywords

Keywords/Phrases

Search In:

Publication Years