Comparison of thermal stabilities between Zr9(Ge2Sb2Te5)91 and Ge2Sb2Te5 phase change films

Zengguang Li; Yegang Lu; Yadong Ma; Sannian Song; Xiang Shen; Guoxiang Wang; Shixun Dai; Zhitang Song

doi:10.1117/12.2242489

12 October 2016 Comparison of thermal stabilities between Zr₉(Ge₂Sb₂Te₅)₉₁ and Ge₂Sb₂Te₅ phase change films

Zengguang Li, Yegang Lu, Yadong Ma, Sannian Song, Xiang Shen, Guoxiang Wang, Shixun Dai, Zhitang Song

Proceedings Volume 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage; 981808 (2016) https://doi.org/10.1117/12.2242489
Event: 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, Changzhou, China

Abstract

Phase change memory is regarded as one of the most promising candidates for the next-generation non-volatile memory. Zr₉(Ge₂Sb₂Te₅)₉₁ film was investigated as storage material for phase-change memory application. The crystallization temperature (T_c) and 10 years data retention temperature of the Zr₉(Ge₂Sb₂Te₅)₉₁ film are about 195 and 106.7°C, respectively, and both higher than that of Ge₂Sb₂Te₅ (GST). The sheet resistance ratio between amorphous and crystalline states is up to four orders of magnitude. The crystalline resistance of Zr₉(Ge₂Sb₂Te₅)₉₁ film is higher than GST for one order of magnitude, which contribute to reduce the power consumption for PCM device. Zr₉(Ge₂Sb₂Te₅)₉₁ film exhibit larger optical band gap in comparison with GST. Zr₉(Ge₂Sb₂Te₅)₉₁ is considered to be a promising material for phase change memory.

Citation Download Citation

Zengguang Li, Yegang Lu, Yadong Ma, Sannian Song, Xiang Shen, Guoxiang Wang, Shixun Dai, and Zhitang Song "Comparison of thermal stabilities between Zr₉(Ge₂Sb₂Te₅)₉₁ and Ge₂Sb₂Te₅ phase change films", Proc. SPIE 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 981808 (12 October 2016); https://doi.org/10.1117/12.2242489

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