Reactive ion etching effects on carbon-doped Ge2Sb2Te5 phase change material in CF4/Ar plasma

Lanlan Shen; Sannian Song; Zhitang Song; Le Li; Tianqi Guo; Bo Liu; Liangcai Wu; Yan Cheng; Songlin Feng

doi:10.1117/12.2245726

12 October 2016 Reactive ion etching effects on carbon-doped Ge₂Sb₂Te₅ phase change material in CF₄/Ar plasma

Lanlan Shen, Sannian Song, Zhitang Song, Le Li, Tianqi Guo, Bo Liu, Liangcai Wu, Yan Cheng, Songlin Feng

Proceedings Volume 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage; 98180M (2016) https://doi.org/10.1117/12.2245726
Event: 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, Changzhou, China

Abstract

Recently, carbon-doped Ge₂Sb₂Te₅ (CGST) has been proved to be a high promising material for future phase change memory technology. In this article, reactive ion etching (RIE) of phase change material CGST films is studied using CF₄/Ar gas mixture. The effects on gas-mixing ratio, RF power, gas pressure on the etch rate, etch profile and roughness of the CGST film are investigated. Conventional phase change material Ge₂Sb₂Te₅ (GST) films are simultaneously studied for comparison. Compared with GST film, 10 % more CF₄ is needed for high etch rate and 10% less CF₄ for good anisotropy of CGST due to more fluorocarbon polymer deposition during CF₄ etching. The trends of etch rates and roughness of CGST with varying RF power and chamber pressure are similar with those of GST. Furthermore, the etch rate of CGST are more easily to be saturated when higher RF power is applied.

Citation Download Citation

Lanlan Shen, Sannian Song, Zhitang Song, Le Li, Tianqi Guo, Bo Liu, Liangcai Wu, Yan Cheng, and Songlin Feng "Reactive ion etching effects on carbon-doped Ge₂Sb₂Te₅ phase change material in CF₄/Ar plasma", Proc. SPIE 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 98180M (12 October 2016); https://doi.org/10.1117/12.2245726

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KEYWORDS

Etching

Reactive ion etching

Argon

Carbon

Fluorine

Ions

Plasma

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