Presentation + Paper
9 September 2016 Controlling the growth temperature gradient and interface shape for traveling heater method growth of CdTe single crystals
Author Affiliations +
Abstract
The temperature gradient at the growth interface is as important as the growth temperature and the growth rate for growing CdTe single crystals by the Traveling Heater Method (THM). This article presents the results of an experimental study of the influence of the growth temperature gradient on THM growth of CdTe single crystals. CdTe crystals were grown at about 900°C with the growth rate of 10 mm/day and the rotation rate of 3 rpm. With the growth temperature gradient of about 30 °C/cm even a single-grain structure became a multi-grain structure in the final stage of growth. On the other hand, with the growth temperature gradient of about 50 °C/cm, even if the crystal started with multi-grains, it became a single crystal eventually. The constitutional supercooling criterion was used to interpret these results.
Conference Presentation
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Youngjoon Suh, Jin-Sang Kim, and Sang-Hee Suh "Controlling the growth temperature gradient and interface shape for traveling heater method growth of CdTe single crystals", Proc. SPIE 9968, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XVIII, 996817 (9 September 2016); https://doi.org/10.1117/12.2237457
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Crystals

Crystals

Interfaces

Tellurium

Supercooling

Crystallography

Quartz

Back to Top