Lithographic performance of a new “low-k” mask

Takashi Adachi; Ayako Tani; Yukihiro Fujimura; Katsuya Hayano; Yasutaka Morikawa; Hiroyuki Miyashita; Yukio Inazuki; Yoshio Kawai

doi:10.1117/12.2242870

10 May 2016 Lithographic performance of a new “low-k” mask

Takashi Adachi, Ayako Tani, Yukihiro Fujimura, Katsuya Hayano, Yasutaka Morikawa, Hiroyuki Miyashita, Yukio Inazuki, Yoshio Kawai

Author Affiliations +

Proceedings Volume 9984, Photomask Japan 2016: XXIII Symposium on Photomask and Next-Generation Lithography Mask Technology; 998404 (2016) https://doi.org/10.1117/12.2242870
Event: Photomask Japan 2016, 2016, Yokohama, Japan

Abstract

We have been researching new mask blank materials for the next generation lithography (NGL) and developed a new mask blank with low-k phase shifter [1] [2]. The low-k phase shifter consists of only Si and N. In our previous work, we reported the advantages of developed SiN phase shift mask (PSM) [2]. It showed high lithographic performance and high durability against ArF excimer laser as well as against cleaning. In this report, we further verified its high lithographic performance on several types of device pattern. The SiN PSM had high lithographic performance compared with conventional 6% MoSi PSM. Exposure latitude (EL) and mask enhancement factor (MEEF) were especially improved on originally designed Gate, Metal and Via patterns.

Citation Download Citation

Takashi Adachi, Ayako Tani, Yukihiro Fujimura, Katsuya Hayano, Yasutaka Morikawa, Hiroyuki Miyashita, Yukio Inazuki, and Yoshio Kawai "Lithographic performance of a new “low-k” mask", Proc. SPIE 9984, Photomask Japan 2016: XXIII Symposium on Photomask and Next-Generation Lithography Mask Technology, 998404 (10 May 2016); https://doi.org/10.1117/12.2242870

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