Paper
10 May 2016 Investigation and modeling of CPL mask profiles using OCD
Hsuan-Chen Chen, Ren-Hao Lin, Chien-Cheng Chen, Cheng-Hsuan Huang, Ta-Cheng Lien, Chia-Jen Chen, Gaston Lee, Hsin-Chang Lee, Anthony Yen
Author Affiliations +
Abstract
Mask profile of chromeless phase-shifting lithography (CPL) defined by OCD has been investigated. In CPL masks, unbalanced bombardments caused by different ion accelerations lead to the formation of micro-notch structures. A better understanding of micro-notch structures is essential for quality gating of mask processes to improve of CPL mask profiles. By measuring 12 of 16 elements of Mueller matrix, we are able to set up a model to simulate the depth of micro-notch structure profile which shows good correlation with TEM images. Moreover, values of CD, quartz etching depth and side wall angle acquired by OCD are presented and compared with those obtained by SEM, TEM and AFM, respectively.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hsuan-Chen Chen, Ren-Hao Lin, Chien-Cheng Chen, Cheng-Hsuan Huang, Ta-Cheng Lien, Chia-Jen Chen, Gaston Lee, Hsin-Chang Lee, and Anthony Yen "Investigation and modeling of CPL mask profiles using OCD", Proc. SPIE 9984, Photomask Japan 2016: XXIII Symposium on Photomask and Next-Generation Lithography Mask Technology, 998408 (10 May 2016); https://doi.org/10.1117/12.2245332
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photomasks

Atomic force microscopy

Transmission electron microscopy

Critical dimension metrology

Scanning electron microscopy

Semiconducting wafers

Lithography

Back to Top