Malgorzata Iwinska,1 Pawel Prystawko,1 Andrzej Taube,2 Kacper Sierakowski,3 Rafal Jakiela,4 Michal Bockowski1
1Institute of High Pressure Physics (Poland) 2Lukasiewicz Research Network (Poland) 3Institute of High Pressure Physics (Poland) 4Institute of Physics, Polish Academy of Sciences (Poland)
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Silicon diffusion process was investigated in GaN layers crystallized by metal-organic vapor phase epitaxy (MOVPE) on native ammonothermal substrates of the highest structural quality. N-type (Si-doped) and p-type (Mg-doped) layers were implanted with Si and treated with ultra-high-pressure annealing. The morphology of the layers was examined at each step by optical microscopy and atomic force microscopy. The crystallographic structure was evaluated by X-ray diffraction measurements. The diffusion of Si was analyzed basing on depth profiles from secondary ion mass spectrometry. Temperature-dependent diffusion coefficients, pre-exponential factors, and activation energies for Si diffusion in n-type and p-type MOVPE-GaN were determined and compared.
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Malgorzata Iwinska, Pawel Prystawko, Andrzej Taube, Kacper Sierakowski, Rafal Jakiela, Michal Bockowski, "Examination of silicon diffusion in GaN," Proc. SPIE PC12001, Gallium Nitride Materials and Devices XVII, PC1200107 (5 March 2022); https://doi.org/10.1117/12.2607583