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5 March 2022 Luminescence spectroscopies on 265-nm AlGaN DUV LEDs and AlN films grown on AlN substrates
Ryota Ishii, Mitsuru Funato, Yoichi Kawakami
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Proceedings Volume PC12001, Gallium Nitride Materials and Devices XVII; PC120010S (2022) https://doi.org/10.1117/12.2608423
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
Photoluminescence, electroluminescence, and bias-dependent time-resolved photoluminescence spectroscopies are performed to study the current injection efficiency, internal quantum efficiency, and light external quantum efficiency of 265-nm AlGaN DUV LEDs grown on AlN substrates. The studies showed that the current injection and light extraction efficiencies, and not the internal quantum efficiency, limit the external quantum efficiency. To solve the issue, we revisited the effect of Si-doping in AlN. Our spectroscopic study deduced the significantly lower neutral Si donor bound exciton and Si donor binding energies than those reported, indicating the possibility to realize highly conductive and transparent n-type AlN:Si layers.
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Ryota Ishii, Mitsuru Funato, and Yoichi Kawakami "Luminescence spectroscopies on 265-nm AlGaN DUV LEDs and AlN films grown on AlN substrates", Proc. SPIE PC12001, Gallium Nitride Materials and Devices XVII, PC120010S (5 March 2022); https://doi.org/10.1117/12.2608423
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KEYWORDS
Aluminum nitride
Deep ultraviolet
Light emitting diodes
External quantum efficiency
Luminescence
Internal quantum efficiency
Spectroscopy
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