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β-Ga2O3 epitaxy from metal-organic chemical vapor deposition (MOCVD) has exhibited low background defects and high mobility which are promising for high-power devices. Vertical field-plate Schottky diodes have been fabricated using MOCVD β-Ga2O3 epitaxy that showed punch through breakdown with a specific on-resistance (Ron,sp) of 0.67 mΩ-cm2. This Ron,sp is among the lowest of comparable β-Ga2O3 drift layer thickness reports and can be contributed from the high-mobility MOCVD β-Ga2O3 epitaxy. We also demonstrated Pseudo vertical diodes fabricated on a thicker MOCVD β-Ga2O3 on Fe-doped substrate that showed higher voltage, better leakage current, and improved surface properties compared to the thinner films on Sn-doped substrate epitaxy.
Esmat Farzana,Fikadu Alema,Takeki Itoh,Nolan Hendricks,Akhil Mauze,Andrei Osinsky, andJames Speck
"β-Ga2O3 epitaxy and power devices from metal-organic chemical vapor deposition", Proc. SPIE PC12002, Oxide-based Materials and Devices XIII, PC120020H (5 March 2022); https://doi.org/10.1117/12.2617832
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Esmat Farzana, Fikadu Alema, Takeki Itoh, Nolan Hendricks, Akhil Mauze, Andrei Osinsky, James Speck, "β-Ga2O3 epitaxy and power devices from metal-organic chemical vapor deposition," Proc. SPIE PC12002, Oxide-based Materials and Devices XIII, PC120020H (5 March 2022); https://doi.org/10.1117/12.2617832