CMOS nanoLEDs

Rajeev Jagga Ram; Jin Xue

doi:10.1117/12.2619079

5 March 2022 CMOS nanoLEDs

Rajeev Jagga Ram, Jin Xue

Proceedings Volume PC12010, Photonic and Phononic Properties of Engineered Nanostructures XII; PC1201002 (2022) https://doi.org/10.1117/12.2619079
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

Silicon technologies have been developed for both electronics and photonics. Future demands call for further innovation in each field separately, but also depend on our ability to bring the best of both worlds together through integrated solutions. For decades, the pursuit of all-silicon electronic-photonic integration has been hindered by the lack of a native light source due to silicon’s indirect bandgap. Here, we discuss the potential for micro- and nano-scale light sources realized in microelectronic CMOS technology without any modification or postprocessing. High brightness is realized by exploiting the well-passivated silicon surfaces available in CMOS to realize efficient light emission despite the indirect bandgap. NIR emission at the silicon bandgap is demonstrated and exploited to demonstrate chip-to-chip optical links and sensors utilizing only silicon light sources.

Conference Presentation

Citation Download Citation

Rajeev Jagga Ram and Jin Xue "CMOS nanoLEDs", Proc. SPIE PC12010, Photonic and Phononic Properties of Engineered Nanostructures XII, PC1201002 (5 March 2022); https://doi.org/10.1117/12.2619079

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